TOP SELLING IPs

Main TOP SELLING IPs
  • All categories
  • PVT
  • UHF RFID
  • EEPROM
  • PLL
  • LVDS

Processes: 3nm, 5nm, 12nm, 22nm, 28nm, 40nm, 55nm

PVT Detector is a unique solution intended to continuously monitor IC status at several on-die locations. It is able to detect manufacturing process deviation, perform voltage and die temperature measurement.

Benefits:
  • High accuracy measurements up to 1⁰C/1%
  • Temperature measurement range -40C to +150C
  • Glitch detector mode
  • Self-calibration
  • Low silicon area

Processes: 130nm, 180nm

UHF RFID tag is wireless transmitting device for tracking and managing inventory, assets and access control. Tags use radio waves to communicate with RFID readers, enabling seamless and accurate data collection in a wide range of applications.

Benefits:
  • High read sensitivity up to -20dBm
  • High write sensitivity  up to -18dBm
  • Small area up to 0.286mm2
  • Integrated EEPROM IP with >1M rewrite cycles

Processes: 130nm, 180nm

EEPROM is programmable read-only memory with the possibility of allowing individual bytes to be erased and reprogrammed. The volume of developed memory IPs from 512-bit to 36Kbyte with different memory configuration and options optimized for low power and low voltage.

Benefits:
  • Super-low power consumption up to 2.2uA
  • Small area up to 0.055mm2@512bit
  • High density of memory cells 
  • Writing and erasing data by one high-voltage pulse
  • Programming and erase times up to 2.1ms

Processes: 3nm, 22nm, 55nm, 65nm, 90nm, 130nm, 180nm, 250nm, 350nm

PLL is designed for signal generation, frequency modulation and demodulation. IPs are used for various radio communication links, navigation systems, multimedia and other applications.

Benefits:
  • Up to 12GHz output frequency
  • Low RMS jitter up to 350fs@6GHz
  • Phase noise up to -140dBc/Hz@1MHz and F=500MHz
  • Low power up to 336uW@800MHz

Processes: 28nm, 40nm, 55nm, 65nm, 90nm, 130nm, 180nm

LVDS is a high-speed data transfer interface that is protected from common-mode noise. IPs are used for point-to-point data transceivers, multidrop buses, backplane data transceivers, clock distribution and cable data transceivers.

Benefits:
  • TIA/EIA-644 LVDS standards
  • Data rate up to 2.5Gbps
  • Full cell library
PVT GF
022GF_PVT_01
  • IO voltage supply 1.8V
  • Сore voltage supply 0.8V
  • Voltage measurement range: 0.1V÷0.92V; 1.5V÷2.0V; 1.5V÷3.63V
  • Temperature measurement range: -40÷+125°C
  • Process detector: SVT, LVT
  • Measurement accuracy after trimming: ±0.8%/±1.2°C
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PVT TSMC
028TSMC_PVT_02
  • IO voltage supply 1.8V
  • Сore voltage supply 0.9V
  • Voltage measurement range: 0.8V÷1.0V
  • Temperature measurement range: -40÷+125°C
  • Process detector: LVT, SVT, HVT
  • Measurement accuracy after trimming: ±2%/±4.5°C
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PVT TSMC
028TSMC_PVT_03
  • IO voltage supply 3.3V
  • Core voltage supply 0.9V
  • Voltage measurement range: 0.65V÷1.15V; 2.0V÷3.6V.
  • Temperature measurement range: -40÷+125°C
  • Process detector: LVT, SVT
  • Measurement accuracy after trimming: ±1.8%/±2.4°C
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PVT TSMC
028TSMC_PVT_04
  • IO voltage supply 3.3V
  • Core voltage supply 0.9V
  • Voltage measurement range: 0.1V÷1.15V; 1.5V÷2.0V; 1.5V÷3.63V; 4.0V÷7.0V
  • Temperature measurement range: -40÷+150°C
  • Process detector: SVT, LVT, HVT
  • Measurement accuracy after trimming: ±0.8%/±1.0°C
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PVT UMC
028UMC_PVT_01
  • IO voltage supply 1.8V
  • Core voltage supply 0.9V
  • Voltage measurement range: 0.58V÷0.92V; 1.0V÷2.0V; 1.5V÷3.63V; 0.8V÷3.63V
  • Temperature measurement range: -40÷+125°C
  • Process detector: SVT, LVT, HVT
  • Measurement accuracy after trimming: ±2%/±1.6°C
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PVT TSMC
040TSMC_PVT_02
  • IO voltage supply 3.3V
  • Core voltage supply 1.1V
  • Voltage measurement range: 0.8V÷1.35V; 2.4V÷3.7V
  • Temperature measurement range: -40÷+125°C
  • Process detector: SVT, LVT
  • Measurement accuracy after trimming: ±2%/±2°C
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PVT TSMC
040TSMC_PVT_03
  • IO voltage supply 3.3V
  • Core voltage supply 1.1V
  • Voltage measurement range: 1.0V÷3.6V; 2.4V÷3.7V
  • Temperature measurement range: -40÷+125°C
  • Process detector: SVT, LVT, HVT
  • Measurement accuracy after trimming: ±1.6%/±1°C
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PVT TSMC
055TSMC_PVT_01
  • IO voltage supply 3.0V
  • Core voltage supply 1.2V
  • Voltage measurement range: 1.0V÷3.6V
  • Temperature measurement range: -40÷+110°C
  • Process detector: SVT, LVT, HVT
  • Measurement accuracy after trimming: ±2%/±3°C
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PVT TSMC
055TSMC_PVT_03
  • IO voltage supply 3.0V
  • Core voltage supply 1.2V
  • Voltage measurement range: 2.25V÷3.6V; 1.09V÷1.32V
  • Temperature measurement range: -40÷+125°C
  • Process detector: SVT, LVT, HVT
  • Measurement accuracy after trimming: ±3%/±3°C
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UHF RFID SMIC
ND6005
  • Operating temperature range: -40÷+65°C
  • Impedance 13-j260Ohm
  • Read sensitivity -19dBm
  • Write sensitivity -16dBm
  • EEPROM memory size 512bit
PDF
UHF RFID SMIC
NT1025_4E4
  • Operating temperature range: -40÷+65°C
  • Impedance 14.7-j600Ohm
  • Read sensitivity -15dBm
  • Write sensitivity-13dBm
  • EEPROM memory size 480bit
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UHF RFID SMIC
180SMIC_G2PHY_01
  • Operating temperature range: -40÷+85°C
  • Impedance 17-j280Ohm
  • Read sensitivity -20dBm
  • Write sensitivity-18dBm
PDF
UHF RFID GF
130GF_G2PHY_01
  • Operating temperature range: -40÷+85°C
  • Impedance 24-j305Ohm
  • Read sensitivity -18dBm
  • Write sensitivity-12dBm
  • BAP-support mode
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UHF RFID GF
130GF_G2PHY_02
  • Operating temperature range: -40÷+85°C
  • Impedance 15.8-j226.6Ohm
  • Read sensitivity -18dBm
  • Write sensitivity-12dBm
  • BAP-support mode
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EEPROM GF
130GF_EEPROM_01
  • Supply voltage 1.2V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 3.6Kbit
  • Configuration 28p8w16bit
  • Access time 0.36us
  • Programming time 4.1ms
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EEPROM GF
130GF_EEPROM_02
  • Supply voltage 1.2V
  • Operating temperature range -40÷+85°C
  • EEPROM memory size 36Kbyte
  • Configuration 288p32w32bit
  • Access time 25ns
  • Programming time 2.1ms
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EEPROM GF
130GF_EEPROM_03
  • Supply voltage 1.2V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 1Kbyte
  • Configuration 64p8w16bit
  • Access time 150ns
  • Programming time 2.1ms
PDF
EEPROM GF
130GF_EEPROM_04
  • Supply voltage 1.2V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 1Kbyte
  • Configuration 66p16w8bit
  • Access time 115ns
  • Programming time 4.2ms
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EEPROM GF
130GF_EEPROM_05
  • Supply voltage 1.2V
  • Operating temperature range -40÷+85°C
  • EEPROM memory size 2048bit
  • Configuration 16p8w16bit
  • Access time 115ns
  • Programming time 4.1ms
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EEPROM SMIC
180SMIC_EEPROM_01
  • Supply voltage 1.8V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 704bit
  • Configuration 11p4w16bit
  • Access time 620ns
  • Programming time 4.2ms
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EEPROM SMIC
180SMIC_EEPROM_02
  • Supply voltage 1.2V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 512-bit
  • Configuration 16p2w16bit
  • Access time 620ns
  • Programming time 4.2ms
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EEPROM SMIC
180SMIC_EEPROM_03
  • Supply voltage 1.2V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 1Kbyte
  • Configuration 64p8w16bit
  • Access time 320ns
  • Programming time 4.1ms
PDF
EEPROM SMIC
180SMIC_EEPROM_04
  • Supply voltage 1.1V
  • Operating temperature range -40÷+85°C
  • EEPROM memory size 1024-bit
  • Configuration 32p2w16bit
  • Access time 320ns
  • Programming time 4.1ms
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EEPROM SMIC
180SMIC_EEPROM_05
  • Supply voltage 1.1V
  • Operating temperature range -40÷+90°C
  • EEPROM memory size 512-bit
  • Configuration 16p1w32bit
  • Access time 200ns
  • Programming time 4.1ms
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EEPROM SMIC
180SMIC_EEPROM_06
  • Supply voltage 1.2V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 1Kbyte
  • Configuration 64p8w16bit
  • Access time 320ns
  • Programming time 4.1ms
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EEPROM SMIC
180SMIC_EEPROM_07
  • Supply voltage 1.1V
  • Operating temperature range -40÷+90°C
  • EEPROM memory size 1024-bit
  • Configuration 32p2w16bit
  • Access time 200ns
  • Programming time 4.1ms
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EEPROM SMIC
180SMIC_EEPROM_08
  • Supply voltage 1.2V
  • Operating temperature range -40÷+90°C
  • EEPROM memory size 1Kbyte
  • Configuration 64p8w16bit
  • Access time 150ns
  • Programming time 4.1ms
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EEPROM SMIC
180SMIC_EEPROM_09
  • Supply voltage 1.2V
  • Operating temperature range -40÷+125°C
  • EEPROM memory size 512-bit
  • Configuration 16p2w16bit
  • Access time 225ns
  • Programming time 4.1ms
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PLL UMC
022UMC_PLL_01
  • 1.8V IO voltage supply
  • 0.8/1.0V core voltage supply
  • Output frequency: 10MHz to 50MHz
  • Output clock RMS jitter: 2ps
  • Current consumption: 410uA@800MHz
  • UMC 22nm ULP technology
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PLL TSMC
055TSMC_PLL_01
  • 1.2V core voltage supply
  • 2.5V/3.3V IO voltage supply
  • Output frequency: 50MHz to 800MHz
  • Output clock RMS jitter: 35ps
  • Current consumption: 280uA@800MHz
  • TSMC CMOS 55nm technology
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PLL TSMC
055TSMC_PLL_02
  • 2.5V IO voltage supply
  • 1.2V core voltage supply
  • Output frequency: 3.5 GHz to 7 GHz
  • Output clock RMS jitter: 350fs
  • Current consumption 30mA
  • TSMC CMOS 55nm technology
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PLL TSMC
055TSMC_PLL_03
  • 2.5/3.3V IO voltage supply
  • 1.2V core voltage supply
  • Output frequency: 1MHz to 50MHz
  • Output clock RMS jitter: 350fs
  • Current consumption 15mA
  • TSMC EF 55nm technology
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PLL TSMC
055TSMC_PLL_08
  • 2.5V IO voltage supply
  • 1.2V core voltage supply
  • Output frequency: 100MHz to 1200MHz
  • Output clock RMS jitter: 717fs
  • Current consumption 2.5mA
  • TSMC CMOS 55nm technology
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PLL TSMC
065TSMC_PLL_07
  • 2.5V IO voltage supply
  • 1.2V core voltage supply
  • Output frequency: 12MHz to 750 MHz
  • Output clock RMS jitter: 2ps
  • Current consumption 2.5mA
  • TSMC CMOS 65nm technology
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PLL TSMC
065TSMC_PLL_08
  • 2.5V IO voltage supply
  • 1.2V core voltage supply
  • Output frequency: 3Ghz to 6GHz
  • Output clock RMS jitter: 1.1ps
  • Current consumption 9.5mA
  • TSMC CMOS CRN65LP technology
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PLL TSMC
065TSMC_PLL_09
  • 2.5V IO voltage supply
  • 1.2V core voltage supply
  • Output frequency: 3Ghz to 6GHz
  • Output clock RMS jitter: 1.1ps
  • Current consumption 9.5mA
  • TSMC CMOS CRN65LP technology
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PLL TSMC
065TSMC_PLL_10
  • 1.2V IO voltage supply
  • Output frequency: 50MHz to 800MHz
  • Output clock RMS jitter: 1.1ps
  • Current consumption 410uA@800MHz
  • TSMC CMOS 65 nm technology
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PLL UMC
065UMC_PLL_01
  • 2.5V IO voltage supply
  • Output frequency: 550MHz to 750MHz
  • Output clock RMS jitter: 35ps
  • Current consumption: 3mA
  • TSMC CMOS 55nm technology
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PLL TSMC
090TSMC_PLL_06
  • 1.0V IO voltage supply
  • Output frequency: 1MHz to 600MHz
  • Output clock RMS jitter: 35ps
  • Current consumption: 1mA
  • TSMC CMOS 90 nm technology
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PLL GF
130GF_PLL_01
  • 1.5/5.0V IO voltage supply
  • Output frequency: 16MHz to 64MHz
  • Output clock RMS jitter: 35ps
  • Current consumption: 0.65mA
  • GF BCD 130nm technology
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PLL GF
130GF_PLL_02
  • 1.2V IO voltage supply
  • Output frequency: 5.8GHz
  • Output clock RMS jitter: 0.8ps
  • Current consumption: 23.8mA
  • GF 130nm CSOI technology
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PLL SIL
180SIL_PLL_01
  • 1.8V IO voltage supply
  • 1.8V core voltage supply
  • Output frequency: 20MHz to 300MHz
  • Output clock RMS jitter: 400ps
  • Current consumption 2mA
  • SilTerra CMOS18G technology
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PLL SMIC
180SMIC_PLL_01
  • 1.8V IO voltage supply
  • Output frequency: 2.8GHz to 3.3GHz
  • Output clock RMS jitter: 400ps
  • Current consumption 7.2mA
  • SMIC CMOS 180nm technology
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PLL SMIC
180SMIC_PLL_02
  • 3.3V IO voltage supply
  • 1.8V core voltage supply
  • Output frequency: 2.8GHz to 3.3 GHz
  • Output clock RMS jitter: 400ps
  • Current consumption 5.9mA
  • SMIC CMOS 180nm technology
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PLL iHP
250iHP_PLL_01
  • 2.2V IO voltage supply
  • Output frequency: 120MHz to 950MHz
  • Output clock RMS jitter: 400ps
  • Current consumption 1.11mA
  • iHP SiGe BiCMOS 0.25 um technology
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PLL iHP
250iHP_PLL_02
  • 2.2V IO voltage supply
  • Output frequency: 120MHz to 950MHz
  • Output clock RMS jitter: 400ps
  • Current consumption 1.67mA
  • iHP SiGe BiCMOS 0.25 um technology
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PLL AMS
350AMS_PLL_04
  • 3.0V IO voltage supply
  • Output frequency: 1.68GHz to 1.917GHz
  • Output clock RMS jitter: 400ps
  • Current consumption 20.8mA
  • AMS SiGe BiCMOS 0.350um technology
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PLL AMS
350AMS_PLL_05
  • 3.0V IO voltage supply
  • Output frequency: 1.013GHz to 1.217GHz
  • Output clock RMS jitter: 400ps
  • Current consumption 19.7mA
  • AMS SiGe BiCMOS 0.350um technology
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LVDS TSMC
028TSMC_LVDS_01
  • LVDS library
  • TIA/EIA-644 LVDS standards without hysteresis
  • Data transfer rate: up to 2Gbps
  • 1.8V IO voltage supply
  • 0.9V core voltage supply
  • 0.9V CMOS input/output logic control signals
  • 0.9V/1.8V level shifters
  • TSMC 28nm CMOS technology
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LVDS TSMC
040TSMC_LVDS_01
  • TIA/EIA-644 LVDS standards without hysteresis
  • CMOS Output data rate: up to 100Mbps
  • Data transfer rate: up to 1.25Gbps
  • 2.5V IO voltage supply
  • 1.1V core voltage supply
  • 1.1V CMOS input/output logic control signals
  • Embedded 1.1V/2.5V level shifters
  • TSMС 40nm LP technology
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LVDS TSMC
055TSMC_LVDS_03
  • TIA/EIA-644 LVDS standards without hysteresis
  • Data transfer rate: up to 200Mbps
  • 2.5V IO voltage supply
  • 1.2V core voltage supply
  • 1.2V CMOS input/output logic control signals
  • Embedded 1.2V/2.5V level shifters
  • TSMC 55nm CMOS technology
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LVDS TSMC
065TSMC_LVDS_05
  • TIA/EIA-644 LVDS standards without hysteresis
  • 1 Gbps (DDR MODE) switching rates
  • 2.5V analog power supply
  • 1.2V digital power supply
  • 1.2V CMOS input logic signals
  • 4-step (2-bit) adjustable transmitter output current range (from 1.75 mA to 7.0 mA)
  • TSMC 65nm CMOS technology
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LVDS TSMC
065TSMC_LVDS_06
  • TIA/EIA-644 LVDS standards without hysteresis
  • 1 Gbps (DDR MODE) switching rates
  • 2.5V analog power supply
  • 1.2V digital power supply
  • 1.2V CMOS input and output logic signals
  • TSMC CMOS 65 nm technology
PDF
LVDS TSMC
065TSMC_LVDS_07
  • TIA/EIA-644 LVDS standards without hysteresis
  • 2.4 Gbps (DDR MODE) switching rate
  • 2.5V analog power supply
  • 2.5V CMOS input logic signals
  • TSMC CMOS 65 nm technology
PDF
LVDS TSMC
065TSMC_LVDS_08
  • TIA/EIA-644 LVDS standards without hysteresis
  • 1 Gbps (DDR MODE) switching rates
  • 2.5V analog power supply
  • 1.2V digital power supply
  • 1.2V CMOS input and output logic signals
  • TSMC CMOS 65 nm technology
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LVDS TSMC
065TSMC_LVDS_10
  • TIA/EIA-644 LVDS standards without hysteresis
  • 2 Gbps (DDR MODE) switching rates
  • 2.5V analog power supply
  • 1.2V digital power supply
  • 1.2V CMOS input and output logic signals
  • TSMC CMOS 65 nm technology
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LVDS TSMC
090TSMC_LVDS_02
  • TIA/EIA-644 LVDS standards
  • 1.6 Gbps (DDR MODE) switching rates for transmitter
  • 1V CMOS input logic signal
  • Output current digital 3 bit adjustment (from 0.75mA to 6.5mA)
  • Low power dissipation (1.4 mW) for receiver
  • Low power dissipation (16.56 mW) for transmitter
  • Propagation delay 590ps for transmitter
  • Propagation delay 500ps for receiver
  • Internal current digital 3-bit adjustment (high inner current for high frequency, from 40 to 300uA) for receiver
  • TSMC 90nm CMOS LP technology
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LVDS GF
130GF_LVDS_01
  • TIA/EIA-644 LVDS standards without hysteresis
  • Data transfer rate: up to 400 Mbps (DDR mode)
  • Clock frequency: up to 1.2 GHz - VDDA voltage supply for analog part
  • 1.5V analog power supply
  • 1.5V digital power supply
  • 1.5V CMOS logic level
  • Global Foundries 130 nm CMOS technology
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LVDS iHP
130iHP_LVDS_01
  • TIA/EIA-644 LVDS standards
  • 1 Gbps (DDR MODE) switching rates
  • 3.3V power supply
  • iHP SiGe BiCMOS 0.13 um technology
PDF
LVDS iHP
130iHP_LVDS_02
  • TIA/EIA-644 LVDS standards without hysteresis
  • 1 Gbps (DDR MODE) switching rates
  • 3.3V power supply
  • iHP SiGe BiCMOS 0.13 um technology
PDF
LVDS TSMC
130TSMC_LVDS_04
  • TIA/EIA-644 LVDS standards without hysteresis
  • 1.25 Gbps (DDR MODE) switching rates
  • 3.3V IO power supply
  • 1.2V Core power supply
  • 1.2V CMOS input and output logic signals
  • LVDS_BIASTXnX adjustable output current (range from 0.75mA to 6.5mA)
  • LVDS_BIASRXnX adjustable output current (range from 6.25uA to 37.5uA)
  • 1.2V/3.3V level shifters
  • TSMC 130nm CMOS technology
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LVDS TSMC
180TSMC_LVDS_09
  • TIA/EIA-644 LVDS standards without hysteresis
  • 1.2 Gbps (DDR MODE) switching rates (600 MHz)
  • 3.3V power supply
  • Half-duplex or full-duplex operation mode
  • TSMC 180 nm CMOS technology
PDF
LVDS TSMC
180TSMC_LVDS_10
  • TIA/EIA-644 LVDS standards without hysteresis
  • Data transfer rate: up to 500Mbps (DDR MODE)
  • 3.3V IO voltage supply
  • 1.8V core voltage supply
  • 1.8V CMOS input/output logic control signals
  • Embedded 1.8V/3.3V level shifters
  • TSMC 180 nm CMOS technology
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